Very low profile – typical height of 1.1 mm
Ideal for automated placement
Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified available
Automotive ordering code; base P/NHM3

175 °C TJ operation
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long term reliability

Ideal for automated placement
Glass passivated chip junction
Available in unidirectional and bidirectional
600 W peak pulse power capability with a
10/1000 μs waveform
Excellent clamping capability
Low inductance

Ideal for automated placement
Glass passivated chip junction
Available in unidirectional and bidirectional
600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance

Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET
175 °C Maximum Junction Temperature
100 % Rg Tested

Features
Benefits
Absolute Maximum Ratings
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case – IGBT ––– ––– 0.42
RθJC Junction-to-Case – Diode ––– ––– 0.83 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.24 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 40
Wt Weight ––– 6 (0.21) ––– g (oz)
ZθJC Transient Thermal Impedance Junction-to-Case (Fig.24)
Motor Control Co-Pack IGBT
TO-247AD
N-channel
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current (Fig.1) 60
IC @ TC = 100°C Continuous Collector Current (Fig.1) 30
ICM Pulsed Collector Current (Fig.3, Fig. CT.5) 120
ILM Clamped Inductive Load Current(Fig.4, Fig. CT.2) 120 A
IF @ TC = 100°C Diode Continuous Forward Current 30
IFM Diode Maximum Forward Current 120
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation (Fig.2) 300
PD @ TC = 100°C Maximum Power Dissipation (Fig.2) 120
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300, (0.063 in. (1.6mm) from case)

FEATURES
dv/dt and di/dt Control
Undervoltage Protection
Short-Circuit Protection
trr Shoot-Through Current Limiting
Low Quiescent Current
CMOS Compatible Inputs
Compatible with Wide Range of MOSFET Devices
Bootstrap and Charge Pump Compatible
(High-Side Drive)

FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in unidirectional and bidirectional
Excellent clamping capability
Very fast response time
Low incremental surge resistance