<?xml version="1.0" encoding="UTF-8"?><rss version="2.0"
	xmlns:content="http://purl.org/rss/1.0/modules/content/"
	xmlns:wfw="http://wellformedweb.org/CommentAPI/"
	xmlns:dc="http://purl.org/dc/elements/1.1/"
	xmlns:atom="http://www.w3.org/2005/Atom"
	xmlns:sy="http://purl.org/rss/1.0/modules/syndication/"
	xmlns:slash="http://purl.org/rss/1.0/modules/slash/"
	>

<channel>
	<title>LOW LOSS &#8211; Matronics</title>
	<atom:link href="https://matronics.com.br/produto-tag/low-loss/feed/" rel="self" type="application/rss+xml" />
	<link>https://matronics.com.br</link>
	<description>Componentes Eletrônicos</description>
	<lastBuildDate>Wed, 03 Dec 2025 19:07:11 +0000</lastBuildDate>
	<language>pt-BR</language>
	<sy:updatePeriod>
	hourly	</sy:updatePeriod>
	<sy:updateFrequency>
	1	</sy:updateFrequency>
	

<image>
	<url>https://i0.wp.com/matronics.com.br/wp-content/uploads/2023/03/icone-matronics.png?fit=32%2C32&#038;ssl=1</url>
	<title>LOW LOSS &#8211; Matronics</title>
	<link>https://matronics.com.br</link>
	<width>32</width>
	<height>32</height>
</image> 
<site xmlns="com-wordpress:feed-additions:1">216139082</site>	<item>
		<title>BUP314D TRANSISTOR IGBT</title>
		<link>https://matronics.com.br/produto/bup314d-transistor-igbt/</link>
		
		<dc:creator><![CDATA[Jam]]></dc:creator>
		<pubDate>Tue, 07 Mar 2023 12:13:44 +0000</pubDate>
				<guid isPermaLink="false">https://www.matronics.com.br/?post_type=product&#038;p=1862</guid>

					<description><![CDATA[BUP314D, Transistor Igbt 25A 1200V]]></description>
										<content:encoded><![CDATA[<p>BUP314D, TRANSISTOR IGBT,</p>
<p>Approx. 1.0V reduced VCE(sat)<br />
and 0.5V reduced VF compared to BUP314D<br />
Short circuit withstand time – 10s<br />
Designed for :<br />
&#8211; Frequency Converters<br />
&#8211; Uninterrupted Power Supply<br />
TrenchStop®<br />
and Fieldstop technology for 1200 V applications<br />
offers :<br />
very tight parameter distribution<br />
high ruggedness, temperature stable behavior<br />
NPT technology offers easy parallel switching capability due to<br />
positive temperature coefficient in VCE(sat)<br />
Low EMI<br />
Low Gate Charge<br />
Very soft, fast recovery anti-parallel Emitter Controlled HE diode</p>
]]></content:encoded>
					
		
		
		<post-id xmlns="com-wordpress:feed-additions:1">1862</post-id>	</item>
	</channel>
</rss>
