• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware

This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this advanced Power MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a drain−to−source
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transient.

HIGH CURRENT POWER MODULE
AVALANCHE RUGGED TECHNOLOGY
(SEE STH60N10 FOR RATING)
VERY LARGE SOA – LARGE PEAK POWER
CAPABILITY
EASY TO MOUNT
SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
EXTREMELY LOW Rth JUNCTION TO CASE
VERY LOW DRAIN TO CASE CAPACITANCE
VERY LOW INTERNAL PARASITIC
INDUCTANCE (TYPICALLY < 5 nH)
ISOLATED PACKAGE UL RECOGNIZED