Application
Low frequency power amplifier
Complementary pair with 2SB647/A

• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware

This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this advanced Power MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a drain−to−source
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transient.

■ NPN TRANSISTOR
DESCRIPTION
The TIP47, TIP48, TIP49 and TIP50 are silicon
Multiepitaxial NPN Planar transistors mounted in
Jedec TO-220 plastic package. It is intented for
use in linear and switching applications.

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
TIP47 TIP48 TIP49 TIP50
VCBO Collector-Base Voltage (IE = 0) 350 400 450 500 V
VCEO Collector-Emitter Voltage (IB = 0) 250 300 350 400 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
IC Collector Current 1 A
ICM Collector Peak Current 2 A
IB Base Current 0.6 A
Ptot Total Dissipation at Tcase ≤ 25 o
Tamb ≤ 25 o
Tstg Storage Temperature -65 to 150 o
Tj Max. Operating Junction Temperature 150 oC