SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 JANUARY 1996
FEATURES
* 60 Volt VDS
* RDS(on)=14Ω
PARTMARKING DETAIL ML
COMPLEMENTARY TYPE ZVN3306F

FEATURES
High current (max. 500 mA)
Low voltage (max. 60 V)
Very high DC current gain (min. 10000).
APPLICATIONS
Where very high amplification is required.
DESCRIPTION
PNP Darlington transistor in a SOT23 plastic package.
NPN complements: BCV27 and BCV47.

2. Features and benefits
Low current (max. 100 mA)
Low voltage (max. 65 V)
3. Applications
General-purpose switching and amplification

Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
collector-emitter voltage
BC856; BC856A; BC856B – – -65 V
BC857; BC857A; BC857B;
BC857C
– – -45 V
VCEO
BC858B
open base
– – -30 V
IC collector current – – -100 mA
ICM peak collector current – – -200 mA
DC current gain
BC856 125 – 475
BC857 125 – 800
BC856A; BC857A 125 – 250
BC856B; BC857B; BC858B 220 – 475
hFE
BC857C
VCE = 5 V; IC = 2 mA
420 – 800