Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
Frequency Converters
Uninterruptible Power Supply
TRENCHSTOP and Fieldstop technology for 600V applications
offers :
very tight parameter distribution
high ruggedness, temperature stable behavior
very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge

Features
High speed switching Low on-resistance
No secondary breakdown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)

• Robust High Voltage Termination
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Isolated Mounting Hole Reduces Mounting Hardware

This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this advanced Power MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a drain−to−source
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transient.

BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION / APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features
Maximum junction temperature: TJ = 175 °C
Tail-less switching off
VCE(sat) = 1.85 V (typ.) @ IC = 60 A
Tight parameter distribution
Safe paralleling
Low thermal resistance
Very fast soft recovery antiparallel diode