Sensitive Gate Trigger Current − 200 A Maximum
Low Reverse and Forward Blocking Current − 50 A Maximum,
TC = 110°C
Low Holding Current − 5 mA Maximum
Passivated Surface for Reliability and Uniformity
These are Pb−Free Devices

NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
FEATURES
100 Volt VCEO
Gain of 8k at IC=250mA
IC=1 Amp

Features
N−Channel for Higher Gain
Drain and Source Interchangeable
High AC Input Impedance
High DC Input Resistance
Low Transfer and Input Capacitance
Low Cross−Modulation and Intermodulation Distortion
Plastic Encapsulated Package
Pb−Free Packages are Available*

Collector to Base Voltage VCBO 35 V
Collector to Emitter Voltage VCEO 30 V
Emitter to Base Voltage VEBO 5 V
Collector Current – Continuous IC 0.8 A
Collector Power Dissipation PC 0.6 W
Thermal Resistance From Junction to Ambient RθJA 208 °C / W
Junction, Storage Temperature TJ, TSTG 150, -55~150 °C

High Current Transistors
PNP Silicon
Features
• This is a Pb−Free Device

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
−80 − −
Vdc
Collector − Base Breakdown Voltage
(IC = −100 Adc, IE = 0)
V(BR)CBO
−80 − −
Vdc
Emitter − Base Breakdown Voltage
(IE = −10 Adc, IC = 0)
V(BR)EBO −5.0 − − Vdc
Collector Cutoff Current
(VCB = −30 Vdc, IE = 0)
(VCB = −30 Vdc, IE = 0, TA = 125°C)
ICBO
−100
−10
nAdc
Adc