2MBI200U4H-120-50, 2MBI200U4H-120, MODULO IGBT,
Test temp. : Ta = 125±5 ℃
(Tj ≦ 150 ℃)
Bias Voltage : VC = 0.8×VCES
Bias Method : Applied DC voltage to C-E
VGE = 0V
Test duration : 1000hr.
Collector-Emitter voltage VCES 1200V
Gate-Emitter voltage VGES ±20
Collector current Ic Continuous Tc=80C = 200A
