60EPS12, HIGH VOLTAGE INPUT RECTIFIER DIODE, 60 A
• Designed and qualified according to
JEDEC®-JESD 47
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
Case: TO-247AC 2L, TO-247AC 3L
Molding compound meets UL 94 V-0 flammability rating
Terminal: matte tin plated leads, solderable per J-STD-002
PRIMARY CHARACTERISTICS
IF(AV) 60 A
VR 800 V to 1200 V
VF at IF 1.09 V
IFSM 1000 A
TJ max. 150 °C
Package TO-247AC 2L, TO-247AC 3L
Circuit configuration Single
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Sinusoidal waveform 60 A
VRRM 800/1200 V
IFSM 1000 A
VF 60 A, TJ = 25 °C 1.09 V
TJ -40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
IRRM
AT 150 °C
mA
VS-60EPS08-M3 800 900
1
VS-60EPS12-M3 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 118 °C, 180° conduction half sine wave 60
Maximum peak one cycle A
non-repetitive surge current
IFSM
10 ms sine pulse, rated VRRM applied 840
10 ms sine pulse, no voltage reapplied 1000
Maximum I2t for fusing I2t 10 ms sine pulse, rated VRRM applied 3530
A2s 10 ms sine pulse, no voltage reapplied 4220
Maximum I2√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 42 200 A2√s
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM
30 A, TJ = 25 °C 1.0 V
60 A, TJ = 25 °C 1.09 V
Forward slope resistance rt TJ = 150 °C
3.96 mΩ
Threshold voltage VF(TO) 0.74 V
Maximum reverse leakage current IRM
TJ = 25 °C
VR = Rated VRRM
0.1
mA
