IXLF19N250A, HIGH VOLTAGE IGBT,
in High Voltage
ISOPLUS i4-PACTM,
IC25 = 32 A
VCES = 2500 V
VCE(sat)= 3.2 V
tf = 250 ns,
High Voltage IGBT
substitute for high voltage MOSFETs
with significantly lower voltage drop
and comparable switching speed
substitute for high voltage thyristors
with voltage control of turn on & turn off
substitute for electromechanical trigger
and discharge relays
ISOPLUS i4-PACTM
high voltage package
isolated back surface
enlarged creepage towards heatsink
enlarged creepage between high
voltage pins
application friendly pinout
high reliability
industry standard outline
