2N4275, PN4275, NPN SWITCHING TRANSISTOR
NPN Switching Transistor
PN4275
This device is designed for high speed saturated switching
applications at currents to 100 mA. Sourced from Process 21.
See PN2369A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 15 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 4.5 V
IC Collector Current – Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
