BC108A, NPN SILICON PLANAR TRANSISTORS,
Collector-Emitter Voltage VCEO 45 25
Collector-Base Voltage VCBO 50 30 V
Emitter-Base Voltage VEBO 6.0 5.0
Collector Current Continuous IC 0.2 A
Power Dissipation at Ta = 25°C
Derate above 25°C
PD
0.6
2.28 W
Power Dissipation at T mW/°C C = 25°C
Derate above 25°C
1.0
6.67
Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
Thermal Resistance
Junction to Case Rth (j-c) 175 °C/W
