BC640, PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
High Current Transistors
PNP Silicon
Features
• This is a Pb−Free Device
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
−80 − −
Vdc
Collector − Base Breakdown Voltage
(IC = −100 Adc, IE = 0)
V(BR)CBO
−80 − −
Vdc
Emitter − Base Breakdown Voltage
(IE = −10 Adc, IC = 0)
V(BR)EBO −5.0 − − Vdc
Collector Cutoff Current
(VCB = −30 Vdc, IE = 0)
(VCB = −30 Vdc, IE = 0, TA = 125°C)
ICBO
−100
−10
nAdc
Adc
